View bd241cfp datasheet:

BD241CFPCOMPLEMENTARY SILICON POWER TRANSISTOR FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERSDESCRIPTIONThe BD241CFP is silicon epitaxial-base NPN3transistor mounted in TO-220FP fully molded 21isolated package.It is inteded for power linear and switchingTO-220FPapplications.INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCER Collector-Base Voltage (RBE = 100 ) 115 VV Collector-Emitter Voltage (I = 0) 100 VCEO BV Emitter-Base Voltage (I = 0) 5 VEBO CI Collector Current 3 ACICM Collector Peak Current 5 AIB Base Current 1 AoP Total Dissipation at T 25 C15 Wtot coT Storage Temperature -65 to 150 CstgoT Max. Operating Junction Temperature 150 CjFor PNP types voltage and current values are negative

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