View bdx33 datasheet:

isc Silicon NPN Darlington Power Transistor BDX33DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 45V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = 4AFE CLow Collector Saturation Voltage: V = 2.5V(Max.)@ I = 4ACE(sat) CComplement to Type BDX34Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 45 VCBOV Collector-Emitter Voltage 45 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 10 ACI Collector Current-Peak 15 ACMI Base Current-Continuous 0.25 ABCollector Power DissipationP 70 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stgTHERM

Keywords - ALL TRANSISTORS DATASHEET

 bdx33.pdf Design, MOSFET, Power

 bdx33.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bdx33.pdf Database, Innovation, IC, Electricity