View bdx33b datasheet:

isc Silicon NPN Darlington Power Transistor BDX33BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.5V(Max.)@ I = 3ACE(sat) CComplement to Type BDX34BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 80 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 10 ACI Collector Current-Peak 15 ACMI Base Current-Continuous 0.25 ABCollector Power DissipationP 70 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stgTHE

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