View bdx33cg datasheet:

BDX33B, BDX33C (NPN)BDX34B, BDX34C (PNP)Darlington ComplementarySilicon Power TransistorsThese devices are designed for general purpose and low speedswitching applications. http://onsemi.comFeaturesDARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.010 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdcCOMPLEMENTARY SILICONVCEO(sus) = 80 Vdc (min) - BDX33B, BDX334BPOWER TRANSISTORS= 100 Vdc (min) - BDX33C, BDX334C80-100 VOLTS, 65 WATTS Low Collector-Emitter Saturation VoltageVCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc- BDX33B, 33C/34B, 34C Monolithic Construction with Build-In Base-Emitter Shunt Resistors Pb-Free Packages are Available*MAXIMUM RATINGSRating Symbol Value UnitTO-220ABCASE 221A-09Collector-Emitter Voltage VCEO VdcBDX33B, BDX34B 80 1 STYLE 12BDX33C, BDX34C 1003Collector-Base Voltage VCB

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