View bf1100 bf1100r 01 datasheet:

DISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FETs BF1100; BF1100Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Specially designed for use at 9 to 12 V supply voltage Short channel transistor with high forward transferCAUTIONadmittance to input capacitance ratioThe device is supplied in an antistatic package. The Low noise gain controlled amplifier up to 1 GHzgate-source input must be protected against static Superior cross-modulation performance during AGC.discharge during transport or handling.APPLICATIONSPINNING VHF and UHF applications such as television tuners andPIN SYMBO

Keywords - ALL TRANSISTORS DATASHEET

 bf1100 bf1100r 01.pdf Design, MOSFET, Power

 bf1100 bf1100r 01.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bf1100 bf1100r 01.pdf Database, Innovation, IC, Electricity