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DISCRETE SEMICONDUCTORS DATA SHEETBF1100WRDual-gate MOS-FETProduct specification 1995 Apr 25NXP Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d drain Low noise gain controlled amplifier up to 1 GHz3g2 gate 2 Superior cross-modulation performance during AGC.4g1 gate 1APPLICATIONSdhandbook, halfpage VHF and UHF applications such as television tuners and professional communications equipment.3 4DESCRIPTIONg2Enhancement type field-effect transistor in a plastic g1microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias c

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