View bf1102 r datasheet:

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageMBD128BF1102; BF1102RDual N-channel dual gate MOS-FETsProduct specification 2000 Apr 11Supersedes data of 1999 Jul 01NXP Semiconductors Product specificationDual N-channel dual gate MOS-FETs BF1102; BF1102RFEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single DESCRIPTIONpackage PINBF1102 BF1102R Specially designed for 5 V applications1 gate 1 (1) gate 1 (1) Superior cross-modulation performance during AGC2 gate 2 (1 and 2) source (1 and 2) High forward transfer admittance3 drain (1) drain (1) High forward transfer admittance to input capacitance 4 drain (2) drain (2)ratio.5 source (1 and 2) gate 2 (1 and 2)6 gate 1 (2) gate 1 (2)APPLICATIONSGain controlled low noise amplifier for VHF and UHF applications such as television tuners and prof

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