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DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connectionsPIN SYMBOL DESCRIPTION Frequencies up to 700 MHz.1 d drain2 s sourceAPPLICATIONS3 g gate LF, HF and DC amplifiers.DESCRIPTION1handbook, halfpage2General purpose N-channel symmetrical junction3dfield-effect transistors in a plastic TO-92 variant package. gsMAM257CAUTIONThe device is supplied in an antistatic package. TheFig.1 Simplified outline (TO-92 variant)gate-source input must be protected against staticand symbol.discharge during transp
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