View bfp843f datasheet:

BFP843FSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolartransistor (HBT).Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency to enable best in class noise performance at high frequencies:NFmin = 1.1 dB at 5.5 GHz, 1.8 V, 8 mA High gain Gma = 18 dB at 5.5 GHz, 1.8 V, 15 mA OIP3 = 19.5 dBm at 5.5 GHz, 1.8 V, 15 mA Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a correspondingcollector resistor)Product validationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.Potential applications WLAN, WiMAX and UWB Satellite communication systems: satellite radio (SDARs, DAB) a

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