View bfr193l3 datasheet:

BFR193L3NPN Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz3 For linear broadband amplifiers1 fT = 8 GHz, NFmin = 1 dB at 900 MHz 2 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFR193L3 RC TSLP-3-11 = B 2 = E 3 = CMaximum Ratings at TA = 25 C, unless otherwise specifiedParameter Symbol Value Unit12 VCollector-emitter voltage VCEO20Collector-emitter voltage VCES20Collector-base voltage VCBO2Emitter-base voltage VEBO80 mACollector current IC10Base current IB580 mWTotal power dissipation1) PtotTS 89C 150 CJunction temperature TJStorage temperature TStg -55 ... 150Thermal ResistanceParameter Symbol Value UnitK/WJunction

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 bfr193l3.pdf Design, MOSFET, Power

 bfr193l3.pdf RoHS Compliant, Service, Triacs, Semiconductor

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