All Transistors. Datasheet

 

View blqg50t65fdla-f blqg50t65fdla-k blqg50t65fdla-w datasheet:

blqg50t65fdla-f_blqg50t65fdla-k_blqg50t65fdla-wblqg50t65fdla-f_blqg50t65fdla-k_blqg50t65fdla-w

BLQG50T65FDLA IGBT 1Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI 50 A CV 1.6 V CE(sat).typFEATURES Fast Switching Low V CE(sat) Positive temperature coefficient TO-3PN TO-247 TO-3PF Fast recovery anti-parallel diode RoHS product APPLICATIONS Photovoltaic converters UPS ORDERING INFORMATION BLQG50T65FDLA-F TO-247 QG50T65FDLA Tube BLQG50T65FDLA-K TO-3PF QG50T65FDLA Tube BLQG50T65FDLA-W TO-3PN QG50T65FDLA Tube BLQG50T65FDLA-F/K/W (2) Package XXXXProduct Code type XXXX YYWW

 

Keywords - ALL TRANSISTORS DATASHEET

 blqg50t65fdla-f blqg50t65fdla-k blqg50t65fdla-w.pdf Design, MOSFET, Power

 blqg50t65fdla-f blqg50t65fdla-k blqg50t65fdla-w.pdf RoHS Compliant, Service, Triacs, Semiconductor

 blqg50t65fdla-f blqg50t65fdla-k blqg50t65fdla-w.pdf Database, Innovation, IC, Electricity

 

 
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