View bss138-g datasheet:

MOSFETBSS138-G N-Channel 50-V(D-S) MOSFETRoHS DeviceFeatures1 : Gate SOT-23 -High density cell design for extremely low RDS(ON).2 : Source3 : Drain -Rugged and Reliable.0.118(3.00)0.110(2.80)30.055(1.40)0.047(1.20)Mechanical data1 2 -Case: SOT-23, molded plastic.0.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, 0.006(0.15)method 2026.0.003(0.08)0.041(1.05)0.100(2.55)0.035(0.90)0.089(2.25)Circuit diagram0.004(0.10) max0.020(0.50)D 0.020(0.50) 0.012(0.30)0.012(0.30) Dimensions in inches and (millimeter)G S Maximum Ratings (at Ta=25C unless otherwise noted) SymbolParameter Value UnitsDrain-source voltageVDS 50 VContinuous gate-source voltageVGS 20 VContinuous drain current ID 0.22 APower dissipationPD 0.35 WThermal resistance from Junction to ambient RJA 357 C/WOperating

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