View bss138 datasheet:

SOT-23 Plastic-Encapsulate MOSFETSBSS138 N-Channel 50-V(D-S) MOSFET SOT-23 FEATURE Low On-Resistance Low Gate Threshold Voltage 1. GATE Fast Switching Speed 2. SOURCE 3. DRAI Low Input / Output Leakage Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 50 V Continuous Gate-Source Voltage VGSS 12 Continuous Drain Current ID 0.34 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient RJA 357 /W Operating Temperature Tj 150 Storage Temperature Tstg -55 ~+150 A,Dec,2010 Electrical characteristics (Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Typ Max UnitOff characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 50 V VDS =0V, VGS =12V 1 A Gate-body leakage IGSS VDS =0V, VGS =10V 0.5 A VDS =0V

Keywords - ALL TRANSISTORS DATASHEET

 bss138.pdf Design, MOSFET, Power

 bss138.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bss138.pdf Database, Innovation, IC, Electricity