View bss138 datasheet:

October 2005BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 6.0 @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize on-state resistance High density cell design for extremely low RDS(ON) while provide rugged, reliable, and fast switching performance.These products are particularly suited for Rugged and Reliable low voltage, low current applications such as small Compact industry standard SOT-23 surface mount servo motor control, power MOSFET gate drivers, and package other switching applications. DDSG SG SOT-23Absolute Maximum Ratings TA=25oC unless otherwise noted

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