View bss138 datasheet:

BSS13850V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=40.120(3.04) RDS(ON), VGS@2.5V,IDS@100mA=60.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition0.056(1.40)0.047(1.20) Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.0.079(2.00) 0.008(0.20)0.070(1.80) 0.003(0.08) ESD Protected Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive)0.004(0.10) 0.044(1.10) Green molding compound as per IEC61249 Std. . (Halogen Free) 0.000(0.00) 0.035(0.90)0.020(0.50)MECHANICAL DATA0.013(0.35) Case: SOT-23 Package Terminals: Solderable per MIL-STD-750,M

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 bss138.pdf Design, MOSFET, Power

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