View bss138 datasheet:

RUMWTypeUMW BSS138UMW BSS138UMW BSS138SMDN-Channel MOSFET Features VDS (V) = 50VSOT23 ID = 300 mA (VGS = 10V) RDS(ON) 2.5 (VGS = 10V) RDS(ON) 3.5 (VGS =2.5V) Low On-Resistance ESD Rating: 1.5KV HBM1. GATE MARKING2. SOURCE 3. DRAIN S S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 50V Drain-Gate Voltage RGS 20K VDG 50 Gate-Source Voltage VGS 20 Continuous Drain Current ID 300 mA Power Dissipation PD 300 mW Thermal Resistance.Junction- to-Ambient RthJA 417 /W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250A, VGS=0V 50 V Zero Gate Voltage Drain Current IDSS VDS=50V, VGS=

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