View bss138e datasheet:

SMD Type MOSFETN-Channel MOSFETBSS138E (KSS138E)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 50V ID = 300 mA (VGS = 10V)1 2 RDS(ON) 2.5 (VGS = 10V)+0.1+0.050.95-0.1 0.1-0.01+0.1 RDS(ON) 3.5 (VGS =2.5V)1.9-0.1 Low On-Resistance ESD Rating: 1.5KV HBM1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 50V Drain-Gate Voltage RGS 20K VDG 50 Gate-Source Voltage VGS 20 Continuous Drain Current ID 300 mA Power Dissipation PD 300 mW Thermal Resistance.Junction- to-Ambient RthJA 417 /W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250A,

Keywords - ALL TRANSISTORS DATASHEET

 bss138e.pdf Design, MOSFET, Power

 bss138e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bss138e.pdf Database, Innovation, IC, Electricity