View bss138w datasheet:

December 2010BSS138WN-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode field effect RDS(ON) = 3.5 @ VGS = 10V, ID = 0.22Atransistor. These products have been designed to RDS(ON) = 6.0 @ VGS = 4.5V, ID = 0.22Aminimize on-state resistance while provide rugged, High density cell design for extremely low RDS(ON)reliable, and fast switching performance.These prod- Rugged and Reliableucts are particularly suited for low voltage, low currentapplications such as small servo motor control, power Compact industry standard SOT-323 surface mountMOSFET gate drivers, and other switching applica- packagetions.DSGSOT-323Marking : 138Absolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 50 VVGSS Gate-Source Vol

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