View btd1664m3 datasheet:

Spec. No. : C223M3 Issued Date : 2003.05.26 CYStech Electronics Corp.Revised Date :2013.08.07 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 25VIC 1.5ABTD1664M3 RCESAT 0.31(typ.) Features The BTD1664M3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA Complementary to BTB1132M3 Pb-free lead plating and halogen-free package Symbol Outline SOT-89 BTD1664M3 BBase CCollector B C E EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-Base Voltage VCBO 45 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 5 VCollector Current (DC) IC 1.5 ACollector Current (Pulse) ICP 3 (Note 1) A0.5 W Power Dissipation PD 2 (Note 2) WJunction Temperature and Storage T

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