View btd882am3 datasheet:

Spec. No. : C848M3-H Issued Date : 2003.06.17 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Low V NPN Epitaxial Planar Transistor CE(sat)BVCEO 50VIC 3ABTD882AM3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772AM3 Pb-free lead plating package Symbol Outline BTD882AM3 SOT-89 BBase CCollector B C E EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limit UnitCollector-Base Voltage VCBO 80 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 5 VCollector Current (DC) IC 3 ACollector Current (Pulse) ICP 7 (Note 1) A 600 mWPower Dissipation Pd 1 (Note 2) W 2 (Note 3) W 208 C/W Thermal Resistance, Junction to RJA 125 (Note 2) C/W Ambient 62.5 (Note 3) C

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