View btd882d3 datasheet:

Spec. No. : C848D3-H Issued Date : 2005.05.04 CYStech Electronics Corp.Revised Date :2006.04.21 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB772D3 Pb-free package Symbol Outline BTD882D3 TO-126ML BBase CCollector EEmitter E C B Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 5 VCollector Current (DC) IC 3A Collector Current (Pulse) ICP 7 (Note) Power Dissipation (TA=25) 1 PD W Power Dissipation (TC=25) 10Junction Temperature Tj 150 C Storage Temperature Tstg -55~+150 C Note : Pulse test, pulse width380s, duty cycle2%.

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