View bu508 datasheet:

isc Silicon NPN Power Transistor BU508DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 125W@T = 25D CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Emitter Voltage(V = 0) 1500 VCES BEV Collector-Emitter Voltage 700 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current- Continuous 8 ACI Collector Current-Peak 15 ACMI Base Current- Continuous 4 ABI Base Current-Peak 6 ABMCollector Power DissipationP 125 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stgSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.0 /Wth j-c1i

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