View bu508af datasheet:

BU508AF TV Horizontal Output ApplicationsTO-3PF11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 15 A PC Collector Dissipation (TC=25C) 60 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 CElectrical Characteristics TC=25C unless otherwise notedSymbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage IC = 100mA, IB = 0 700 V BVEBO Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 5 VICES Collector Cut-off Current VCE = 1500V, VBE = 0 1 mA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 mA hFE * DC Cur

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