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bu508afbu508af

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 8 A ICP Collector current (Pulse) 15 A IB Base current (DC) 4 A IBM Base current (Pulse) 6 A Ptot Total power dissipation TC=25 34 W Tj Junction temperature 150 Tstg Storage temperature -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508AF CHARACTERISTICS T

 

Keywords - ALL TRANSISTORS DATASHEET

 bu508af.pdf Design, MOSFET, Power

 bu508af.pdf RoHS Compliant, Service, Triacs, Semiconductor

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