View bu508af 2 datasheet:

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use inhorizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 1500 VVCEO Collector-emitter voltage (open base) - 700 VIC Collector current (DC) - 8 AICM Collector current peak value - 15 APtot Total power dissipation Ths 25 C - 34 WVCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.6 A - 1.0 VICsat Collector saturation current f = 16 kHz 4.5 - Atf Fall time ICsat = 4.5 A; f = 16kHz 0.7 - sPINNING - SOT199 PIN CONFIGURATION SYMBOLPIN DESCRIPTIONccase1 base2 collectorb3 emittercase isolated1 2 3

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