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View bu508afi datasheet:

bu508afibu508afi

UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TO-3PML TRANSISTOR 1. BASE2. COLLECTOR3. EMITTERDESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers.1 2 3Features * TV color horizontal deflection. * With TO-3PML fully isolated package. Absolute Maximum Rating Tc=25C PARAMETER SYMBOL VALUE UNITCollector-base voltage(V =0) V 1500 VBE CBOCollector-emitter voltage(I =0) V 700 VB CEOEmitter-base Voltage(I =0) V 10 VC EBOCollector peak current Icp 15 A Collector current Ic 8 A Collector power dissipation Pc 60 W Junction temperature Tj 150 C Storage temperature Tstg -65~150 C ELECTRICAL CHARACTERISTICS Tc=25C PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITCollector-bas

 

Keywords - ALL TRANSISTORS DATASHEET

 bu508afi.pdf Design, MOSFET, Power

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