View bu508df datasheet:

NPN BU508DFSILICON DIFFUSED POWER TRANSISTORSSILICON DIFFUSED POWER TRANSISTORSThe BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode forthe BU508DF).They are a high voltage, high speed switching and they are intended for use in horizontal deflexioncircuits of colour television receivers.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitVCEO Collector-Emitter Voltage IB = 0 700 VVCESM Collector-Emitter Voltage VBE = 0 1500 VIC Collector Current 8AICM Collector Peak Current 15 AIB Base Current 4AICsat Collector Current saturation 4.5 AIBM Base Peak Current 6APt Total Power Dissipation @ TC = 25 34 WattsTJ Junction Temperature 150 CTStg Storage Temperature -65 to +150 CTHERMAL CHARACTERISTICSSymbol Ratings Value UnitThermal Resistance, Junction to Mounting BaseRthJ-mb 1.0 K/WRthJ-h Thermal R

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