View bu508dfi datasheet:

isc Silicon NPN Power Transistor BU508DFIDESCRIPTIONHigh Voltage-V = 1500V(Min.)CESCollector Current- I = 8.0ACBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 1500 VCESV Collector-Emitter Voltage 700 VCEOV Emitter-Base Voltage 10 VEBOI Collector Current-Continuous 8.0 ACI Collector Current-Peak 15 ACMCollector Power DissipationP 50 WC@T =25CT Junction Temperature 150 JT Storage Temperature -65~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 2.5 /Wth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silico

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