View bu508dr datasheet:

isc Silicon NPN Power Transistor BU508DRDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 1500 VCESV Collector-Emitter Voltage 700 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 8.0 ACI Collector Current-Peak 15 ACMI Base Current-Continuous 4 ABI Base Current-Peak 6 ABMCollector Power DissipationP 125 WC@T =25CT Junction Temperature 150 JStorage Temperature -65~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.0 /Wth j-c1isc we

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