View bu508fi datasheet:

isc Silicon NPN Power Transistor BU508FIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 700 VCEOV Emitter-Base Voltage 8 VEBOI Collector Current- Continuous 8 ACI Collector Current-Peak 15 ACMCollector Power DissipationP 60 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -65~150 TstgSYMBOL PARAMETER MAX UNITThermal Resistance,Junction to Case 2.08 /WRth j-c1isc website www.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Pow

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