View buz11 datasheet:

BUZ11Data Sheet September 2013 File Number 2253.2FeaturesN-Channel Power MOSFET50V, 30A, 40 m 30A, 50VThis is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040field effect transistor designed for applications such as SOA is Power Dissipation Limitedswitching regulators, switching converters, motor drivers, Nanosecond Switching Speedsrelay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. Linear Transfer CharacteristicsThis type can be operated directly from integrated circuits. High Input ImpedanceFormerly developmental type TA9771. Majority Carrier DeviceOrdering Information Related Literature- TB334 Guidelines for Soldering Surface MountPART NUMBER PACKAGE BRANDComponents to PC BoardsBUZ11-NR4941 TO-220AB BUZ11NOTE: Wh

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