View buz110s spp80n05 datasheet:

BUZ 110 SSPP80N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 110 S 55 V 80 A 0.012 TO-220 AB Q67040-S4005-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 80TC = 100 C 66Pulsed drain current IDpulsTC = 25 C 320Avalanche energy, single pulse EAS mJID = 80 A, VDD = 25 V, RGS = 25 L = 144 H, Tj = 25 C 460Avalanche current,limited by Tjmax IAR 80 AAvalanche energy,periodic limited by Tjmax EAR 20 mJReverse diode dv/dt dv/dt kV/sIS = 80 A, VDS = 40 V, diF/dt = 200 A/sTjmax = 175 C 6Gate source voltage VGS 20 VPower dissipation Ptot WTC = 25 C 200Semiconductor Group 1 28/Jan/1998BUZ 110 SSPP80

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