View buz11a datasheet:

isc N-Channel Mosfet Transistor BUZ11AFEATURESStatic Drain-Source On-Resistance: R = 0.055(Max)DS(on)Avalanche rugged technologyHigh current capability175 Operating TemperatureHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current,high speed switchingSolenoid and relay driversRegulatorsDC-DC & DC-AC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 50 VDSS GSV Gate-Source Voltage 20 VGSI Drain Current-continuous@ TC=25 26 ADI Drain Current-Single Plused 104 ADMP Total Dissipation@TC=25 75 WtotT Max. Operating Junction Temperature 175 jT Storage Temperature Range -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance,Juncti

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