View c945t datasheet:

C945TNPN SiliconElektronische BauelementePlastic-Encapsulate TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURES Low noise TO-92Excellent hFE linearity Complementary to A733TMAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO 60 V 1Collector-Emitter Voltage VCEO 50 V23 1 23Emitter-Base Voltage VEBO 5 VCollector Current Continuous IC 150 mA1. EMITTER2. COLLECTORCollector Power Dissipation PC 400 mW3. BASSJunction, Storage Temperature TJ, TSTG 125, -55~125 C ELECTRICAL CHARACTERISTICS (Tamb = 25 C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitsIC = 1mA, IE = 0 Collector-Base Breakdown Voltage V(BR)CBO 60 VIC = 100A, IB = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 50 VIE = 100mA, IC = 0 Em

Keywords - ALL TRANSISTORS DATASHEET

 c945t.pdf Design, MOSFET, Power

 c945t.pdf RoHS Compliant, Service, Triacs, Semiconductor

 c945t.pdf Database, Innovation, IC, Electricity