View cem3060 datasheet:

CEM3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 14A, RDS(ON) = 7.8m @VGS = 10V. RDS(ON) = 11.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 14 ADrain Current-Pulsed a IDM 50 AMaximum Power Dissipation PD 2.5 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 50C/WThis is preliminary information on a new product in development now . Rev 2. 2007.Oct.Details are subject to change w

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