View cem3307 datasheet:

CEM3307P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID -6.2 ADrain Current-Pulsed a IDM -25 AMaximum Power Dissipation PD 2.0 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 62.5 C/W Rev 3. 2011.FebDetails are subject to change without notice . http://www.cetsemi.com1CEM3307Elec

Keywords - ALL TRANSISTORS DATASHEET

 cem3307.pdf Design, MOSFET, Power

 cem3307.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cem3307.pdf Database, Innovation, IC, Electricity