View cem3317 datasheet:

CEM3317P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V.-30V, -4.9A, RDS(ON) = 52m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acquired.Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Channel 1 Channel 2 UnitsDrain-Source Voltage VDS -30 -30 VGate-Source Voltage VGS 20 20 VDrain Current-Continuous ID -6.2 -4.9 ADrain Current-Pulsed a IDM -25 -20 AMaximum Power Dissipation PD 2.0 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b

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