View cem4207 datasheet:
CEM4207P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-40V, -7A, RDS(ON) = 30m @VGS = -10V. RDS(ON) = 40m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -40 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID -7 ADrain Current-Pulsed a IDM -28 AMaximum Power Dissipation PD 2 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 62.5 C/WRev 1. 2011.DecThis is preliminary information on a new product in development now . http:
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cem4207.pdf Design, MOSFET, Power
cem4207.pdf RoHS Compliant, Service, Triacs, Semiconductor
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