View cem4228 datasheet:

CEM4228www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel MOSFETS1Top ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER SYMBOL LIMIT UNITDrain-Source Voltage VDS 60V Gate-Source Voltage VGS 20TC = 25 C 7Continuous Drain Current IDTC = 125 C 4Continuous Source Current (Diode Conduction) a IS 3.6 APulsed Drain Current b IDM 28Single Pulse Avalanche Current IAS 18L = 0.1 mHSingle Pulse Avalanche Energy EAS 16.2 mJ TC = 25 C 4Maximum Power Dissipation b PD W TC = 125 C 1.3Operating

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