View cem4279 datasheet:

CEM4279Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES540V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V.-40V, -4.3A, RDS(ON) = 66m @VGS = -10V. RDS(ON) = 105m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acquired.Surface mount Package.SO-81 2 3 41 S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol N-Channel P-ChannelUnitsDrain-Source Voltage VDS 40 -40 VGate-Source Voltage VGS 20 20 VDrain Current-Continuous ID 6.1 -4.3 ADrain Current-Pulsed a IDM 24 -17 AMaximum Power Dissipation PD 2.0 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b R

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