View cem4282 datasheet:
CEM4282N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 6.6A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 48m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 40 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 6.6 ADrain Current-Pulsed a IDM 26 AMaximum Power Dissipation PD 2.5 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 50 C/WRev 1. 2006.SepDetails are subject to change without notice . http://www.cetsemi.com1CEM4282Electrical Charac
Keywords - ALL TRANSISTORS DATASHEET
cem4282.pdf Design, MOSFET, Power
cem4282.pdf RoHS Compliant, Service, Triacs, Semiconductor
cem4282.pdf Database, Innovation, IC, Electricity



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet