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cem4282cem4282

CEM4282N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 6.6A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 48m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 40 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 6.6 ADrain Current-Pulsed a IDM 26 AMaximum Power Dissipation PD 2.5 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 50 C/WRev 1. 2006.SepDetails are subject to change without notice . http://www.cetsemi.com1CEM4282Electrical Charac

 

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