All Transistors. Datasheet

 

View cem4301 datasheet:

cem4301cem4301

CEM4301P-Channel Enhancement Mode Field Effect TransistorFEATURES-40V, -6A, RDS(ON) = 42m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -40 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID -6 ADrain Current-Pulsed a IDM -20 AMaximum Power Dissipation PD 2.5 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 50 C/W Rev 2. 2010.AugDetails are subject to change without notice . http://www.cetsemi.com1CEM4301Electrical Chara

 

Keywords - ALL TRANSISTORS DATASHEET

 cem4301.pdf Design, MOSFET, Power

 cem4301.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cem4301.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.