View cem4308 datasheet:

CEM4308Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 5.8A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 40 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 5.8 ADrain Current-Pulsed a IDM 23 AMaximum Power Dissipation PD 2.5 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 62.5 C/W Rev 1. 2006.SepDetails are subject to change without notice . http://www.cetsemi.com1CEM4308El

Keywords - ALL TRANSISTORS DATASHEET

 cem4308.pdf Design, MOSFET, Power

 cem4308.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cem4308.pdf Database, Innovation, IC, Electricity