View cem4435a datasheet:

CEM4435AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -8A, RDS(ON) = 20m @VGS = -10V. RDS(ON) = 33m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID -8 ADrain Current-Pulsed a IDM -32 AMaximum Power Dissipation PD 2.5 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 50 C/WRev 2. 2010.JulySpecification and data are subject to change without notice . http://www.cetsemi.comCEM4435AEl

Keywords - ALL TRANSISTORS DATASHEET

 cem4435a.pdf Design, MOSFET, Power

 cem4435a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cem4435a.pdf Database, Innovation, IC, Electricity