View cep6056 ceb6056 datasheet:

CEP6056/CEB6056N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 100A, RDS(ON) = 6.2m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 60 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 100 ADrain Current-Pulsed a IDM 360 AMaximum Power Dissipation @ TC = 25 C 100 WPD- Derate above 25 C 0.66 W/ CSingle Pulsed Avalanche Energy d EAS 272 mJSingle Pulsed Avalanche Current d IAS 33 ATJ,TstgOperating and Store Temperature Range -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 1.5 C/WThe

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