View cep6060l ceb6060l datasheet:

CEP6060L/CEB6060LN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 60 VGate-Source Voltage VGS 16 VDrain Current-Continuous @ TC = 25 C A52.4ID@ TC = 100 C37 ADrain Current-Pulsed a IDM 210 AMaximum Power Dissipation @ TC = 25 C 120 WPD- Derate above 25 C 0.8 W/ COperating and Store Temperature Range TJ,Tstg -65 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 1.24 C/WThermal Resistance, Junct

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