View cep6086l ceb6086l datasheet:
CEP6086L/CEB6086LPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 72A, RDS(ON) = 10m @VGS = 10V. RDS(ON) = 13.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedzParameter Symbol Limit UnitsDrain-Source Voltage VDS 60 VGate-Source Voltage VGS 20 VDrain Current-Continuous @ TC = 25 C 72AID@ TC = 100 C51 ADrain Current-Pulsed a IDM 288 AMaximum Power Dissipation @ TC = 25 C 75 WPD- Derate above 25 C 0.5 W/ CEAS 132Single Pulsed Avalanche Energy d mJIASSingle Pulsed Avalanche Current d 23 AOperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal Characteristics
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cep6086l ceb6086l.pdf Design, MOSFET, Power
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