View cep60n06g ceb60n06g datasheet:

CEP60N06G/CEB60N06GN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 60A, RDS(ON) = 16m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 60 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 60 ADrain Current-Pulsed a IDM 240 AMaximum Power Dissipation @ TC = 25 C 125 WPD- Derate above 25 C 0.83 W/ CEASSingle Pulsed Avalanche Energy d 360 mJIASSingle Pulsed Avalanche Current d 30 AOperating and Store Temperature Range TJ,Tstg -65 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 1.2 C/WT

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