View cep85n75v ceb85n75v datasheet:

CEP85N75V/CEB85N75VN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES75V, 85A, RDS(ON) = 12m @VGS = 12V. RDS(ON) = 13m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 75 VGate-Source Voltage VGS 30 VDrain Current-Continuous @ TC = 25 C 85 AID@ TC = 100 C A59Drain Current-Pulsed a IDM 340 AMaximum Power Dissipation @ TC = 25 C 200 WPD- Derate above 25 C 1.33 W/ CSingle Pulsed Avalanche Energy d EAS 880 mJIAS 45 ASingle Pulsed Avalanche Current d Operating and Store Temperature Range TJ,Tstg -55 to 175 CThermal Characteristics

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