View cs10n60a8hd datasheet:

Silicon N-Channel Power MOSFET R CS10N60 A8HD VDSS 600 V General Description ID 10 A CS10N60 A8HD, the silicon N-channel Enhanced PD (TC=25) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features Fast Switching ESD Improved Capability Low Gate Charge (Typical Data:39nC) Low Reverse transfer capacitances(Typical:16pF) 100% Single Pulse avalanche energy Test Applications Power switch circuit of adaptor and charger. AbsoluteTc= 25 unless otherwise specified Symbol Parameter Rating Units VDSS Drai

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